3ln01s no.6957-1/7 3 1 2 1.6 1.6 0.75 0.8 0.4 0.4 0.5 0.5 0.6 0.2 0.3 0.1 0 to 0.1 0.1 min 1 : gate 2 : source 3 : drain sanyo : smcp features ? low on-resistance ? ultrahigh-speed switching ? 2.5v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 10 v drain current (dc) i d 0.15 a drain current (pulse) i dp pw 10 s, duty cycle 1% 0.6 a allowable power dissipation p d 0.15 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7013a-013 ordering number : EN6957B 62712 tkim/41006pe msim tb-00002189/60801 tsim ta-1922 3ln01s n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : smcp ? jeita, jedec : sc-75, sot-416 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection sanyo semiconductors data sheet 3ln01s-tl-e tl ya lot no. lot no. 1 2 3
3ln01s no.6957-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =80ma 0.15 0.22 s static drain-to-source on-state resistance r ds (on)1 i d =80ma, v gs =4v 2.9 3.7 r ds (on)2 i d =40ma, v gs =2.5v 3.7 5.2 r ds (on)3 i d =10ma, v gs =1.5v 6.4 12.8 input capacitance ciss v ds =10v, f=1mhz 7.0 pf output capacitance coss 5.9 pf reverse transfer capacitance crss 2.3 pf turn-on delay time t d (on) see speci ed test circuit. 19 ns rise time t r 65 ns turn-off delay time t d (off) 155 ns fall time t f 120 ns total gate charge qg v ds =10v, v gs =10v, i d =150ma 1.58 nc gate-to-source charge qgs 0.26 nc gate-to-drain ?miller? charge qgd 0.31 nc diode forward voltage v sd i s =150ma, v gs =0v 0.87 1.2 v switching time test circuit ordering information device package shipping memo 3ln01s-tl-e smcp 3,000pcs./reel pb free pw=10 s d.c. 1% 4v 0v v in p. g 50 g s 3ln01s i d =80ma r l =187.5 v dd =15v v ou t v in d
3ln01s no.6957-3/7 0 0 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 0.6 0.8 1.0 i d -- v ds v gs =1.5v 2.0v 2.5v 4.0v 3.5v 3.0v 6.0v 0 0 12 1 34 2 56 3 4 5 6 7 8 9 10 78910 r ds (on) -- v gs ta=25 c 0.01 0.1 23 57 23 5 10 7 5 3 2 1.0 r ds (on) -- i d 0 0 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 i d -- v gs v ds =10v ta= --25 c ta=75 c 75 c --25 c 25 c 25 c --25 c ta=75 c it00029 it00030 it00031 it00032 v gs =4v 40ma i d =80ma drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- 25 c --60 0 --40 --20 1 020 2 40 60 3 4 5 6 7 80 100 120 140 160 r ds (on) -- ta i d =40ma, v gs =2.5v i d =80ma, v gs =4.0v 0.01 0.01 0.1 23 57 23 5 0.1 7 5 3 2 7 5 3 2 1.0 v ds =10v | y fs | -- i d 75 c 25 c ta= --25 c it00035 it00036 0.01 0.1 23 57 23 5 10 1.0 7 5 3 2 r ds (on) -- i d v gs =2.5v 0.001 1.0 0.01 23 57 23 5 100 10 7 5 3 2 7 5 3 2 r ds (on) -- i d v gs =1.5v ta=75 c 25 c --25 c --25 c 25 c ta=75 c it00033 it00034 static drain-to-source on-state resistance, r ds (on) -- drain current, i d -- a drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- ambient temperature, ta -- c drain current, i d -- a forward transfer admittance, | yfs | -- s
3ln01s no.6957-4/7 0.01 0.6 0.5 0.8 0.7 0.9 1.0 1.1 1.2 0.1 1.0 7 5 3 2 7 5 3 2 v gs =0v i s -- v sd --25 c 25 c ta=75 c 0 2 4 6 8 101214161820 1.0 10 7 5 3 2 7 5 3 2 100 ciss coss crss f=1mhz ciss, coss, crss -- v ds 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 9 10 v gs -- qg v ds =10v i d =150ma 0.01 10 0.1 23 57 2 1000 100 7 5 3 2 7 5 3 2 sw time -- i d v dd =15v v gs =4v t d (on) t r t f t d (off) it00037 it00038 it00039 it00040 diode forward voltage, v sd -- v source current, i s -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate-to-sourse voltage, v gs -- v 0 0.05 0.10 0.15 0.20 0 20 40 60 80 100 120 140 160 p d -- ta it01961 ambient temperature, ta -- c allowable power dissipation, p d -- w
3ln01s no.6957-5/7 embossed taping speci cation 3ln01s-tl-e
3ln01s no.6957-6/7 outline drawing land pattern example 3ln01s-tl-e mass (g) unit 0.003 * for reference mm unit: mm 0.5 0.5 0.7 1.3 0.7 0.7 0.6
3ln01s no.6957-7/7 ps this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. note on usage : since the 3ln01s is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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